Chanzon Partners with Global Semiconductor Leader to Advance SiC & GaN Technologies

Core Partnership Overview

In response to the global electronics industry’s shift toward wide-bandgap semiconductors, Chanzon Technology has forged a strategic partnership with a leading global semiconductor firm. This collaboration combines Chanzon’s expertise in application-specific solutions with the partner’s leadership in materials science and wafer manufacturing, creating a “technology-to-market” ecosystem for silicon carbide (SiC) and gallium nitride (GaN) technologies. The alliance aims to accelerate commercialization of these next-gen semiconductors, addressing critical demand in electric vehicles (EVs), renewable energy, and 5G infrastructure.

Technical Breakthroughs: SiC & GaN Advantages

TechnologyKey AdvantagesTarget Applications
SiC• 15% longer EV range• 99% photovoltaic inverter efficiency• 40% higher temperature tolerance (175°C vs. silicon’s 125°C)EV powertrains, solar inverters, industrial motors
GaN• 20% lower base-station energy consumption
• 30% fasterRF signal transmission
• 40% smaller module size
5G base stations, radar systems, consumer electronics

These materials deliver superior performance in high-temperature, high-power environments. For example, Chanzon’s SiC MOSFETs reduce energy loss by 50% compared to silicon-based alternatives, while GaN RF modules enable compact, energy-efficient 5G infrastructure.

R&D Collaboration & Market Expansion

Investment & Targets

Capacity Allocation: 40% of Chanzon’s Suzhou factory output (60 million units/year) will be dedicated to SiC devices, supporting the International Energy Agency’s projection of 35% global EV penetration by 2030.

Joint Laboratory: A $50 million facility integrating over 120 patents to focus on SiC/GaN material optimization and device design.

Cost Reduction: Goal to cut SiC MOSFET production costs by 30% within 3 years (from $15 to $8 per unit) through epitaxial growth and packaging innovations.

Investment & Targets

Cost Reduction: Goal to cut SiC MOSFET production costs by 30% within 3 years (from $15 to $8 per unit) through epitaxial growth and packaging innovations.

Global Market Strategy

Short-Term: Leverage Chanzon’s existing networks in East/South China to capture 30% of regional EV inverter component demand.

Mid-Term: Enter European automotive supply chains via the partner’s distribution channels, targeting GaN radar systems for autonomous vehicles.

Long-Term: Establish a Southeast Asian manufacturing hub to serve ASEAN’s growing renewable energy sector.

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